Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth

W2238780195 · 수집 2026-10-04 18:12:22

T10623 Thin-Film Transistor Technologies

CoT 라벨링

라벨링 전

PDF 파일

저장된 PDF 없음

기본 정보

DOI 제목 발행년도 저널 URL 페이지 열기 PDF URL PDF 열기 발행기관 피인용수 라이선스

추가 정보 초록

Presented work focuses the attention on two regions of MOS structure placed in the vicinity of the semiconductor/dielectric interface, in particular: on part of dielectric layer and thin layer of the substrate. In the presented work the application of absorption as a tool that can vary the absorption depth of excitation light into the semiconductor substrate is discussed. The changes of the absorption depth of visible light allows to obtain Raman signal from places in the substrate placed at different distances from the dielectric/semiconductor interface. The series of Raman spectra obtained from visible excitation in the case of varying absorption depth allowed to analyze the structure of the substrate as a function of distance from the interface. Deep ultraviolet Raman study regarding part of silicon dioxide layer placed directly at the interface is not discussed so far which makes the analysis of the structure of this part of dielectric layer possible. Comparison of reported in this work Raman data with structure of silicon/silicon dioxide interface obtained from other experimental techniques proves the applicability of proposed methodology.

본문

PDF 본문 자동 추출 실패: [download] HTTP 403 Forbidden (2026-10-04 23:43:25)

활용가능성

이력 0건

아직 편집 이력이 없습니다. 저장할 때마다 이전 내용이 여기에 백업됩니다.