Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures

W2219696902 · 수집 2026-10-04 18:12:22

T10022 Semiconductor Quantum Structures and Devices

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We report the observation of a thermally activated resonant tunnelling feature in the current–voltage characteristics (I(V)) of triple barrier resonant tunnelling structures (TBRTS) due to the alignment of the n = 1 confined states of the two quantum wells within the active region. With great renewed interest in tunnelling structures for high frequency (THz) operation, the understanding of device transport and charge accumulation as a function of temperature is critical. With rising sample temperature, the tunnelling current of the observed low voltage resonant feature increases in magnitude showing a small negative differential resistance region which is discernible even at 293 K and is unique to multiple barrier devices. This behaviour is not observed in conventional double barrier resonant tunnelling structures where the transmission coefficient at the Fermi energy is predominantly controlled by an electric field, whereas in TBRTS it is strongly controlled by the 2D to 2D state alignment.

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