Sub-10-nm patterning process using directed self-assembly with high χ block copolymers

W2076150140 · 수집 2026-10-04 18:12:19

T11338 Advancements in Photolithography Techniques

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The perpendicularly orientated lamellar structure of the self-organized diblock copolymer is an attractive template for sub-10-nm line-and-space pattern formation. We propose a method of evaluating the neutral layer (NL) whose performance has an important bearing on the perpendicular orientation of the lamellar structure. The random copolymer of methyl methacrylate and i-butyl POSS methacrylate (MAIBPOSS) has been investigated as an NL for a polymethylmethacrylate-b-polymethacrylethylPOSS (PMMA-b-PMAIBPOSS) lamellar structure. PMMA-b-PMAIBPOSS material has the potential to form sub-10 nm line-and-space pattern, in addition to high etch selectivity due to its POSS structure. Under the free surface, PMMA-b-PMAIBPOSS film on the random copolymer layer showed horizontal orientation. However, a half-pitch of a 7-nm finger pattern structure was observed by peeling off the horizontally oriented layer. The upper portion of the PMMA-b-PMAIBPOSS film was eliminated till proximity of the random copolymer layer by CF4 gas etching. From the result, it was revealed that the PMMA-r-PMAIBPOSS works as an NL. It was confirmed that the contact angle analysis using an appropriate polymer is a suitable method for evaluation of the surface energy performance of the copolymer with the attribute of high segregation energy.

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PDF 본문 자동 추출 실패: [download] not a PDF (Content-Type: text/html, final URL: https://www.spiedigitallibrary.org/journals/journal-of-micro-nanolithography-mems-and-moems/volume-14/issue-2/023502/Sub-10-nm-patterning-process-using-directed-self-assembly-with/10.1117/1.JMM.14.2.023502.pdf) (2026-10-04 21:56:03)

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