Optimization ofμc-Si1−xGex:H Single-Junction Solar Cells with Enhanced Spectral Response and Improved Film Quality

W2067441311 · 수집 2026-10-04 18:12:19

T10623 Thin-Film Transistor Technologies

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Effects of RF power on optical, electrical, and structural properties of μ c-Si 1− x Ge x :H films was reported. Raman and FTIR spectra from μ c-Si 1− x Ge x :H films reflected the variation in microstructure and bonding configuration. Unlike increasing the germane concentration for Ge incorporation, low RF power enhanced Ge incorporation efficiency in μ c-Si 1− x Ge x :H alloy. By decreasing RF power from 100 to 50 W at a fixed reactant gas ratio, the optical bandgap of μ c-Si 1− x Ge x :H was reduced owing to the increase in Ge content from 11.2 to 23.8 at.%, while Ge-related defects and amorphous phase were increased. Consequently, photo conductivity of 1.62 × 10 −5 S/cm was obtained for the μ c-Si 1− x Ge x :H film deposited at 60 W. By applying 0.9 μ m thick μ c-Si 1− x Ge x :H absorber with<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="M1"><mml:mrow><mml:msub><mml:mrow><mml:mi>X</mml:mi></mml:mrow><mml:mrow><mml:mi>C</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>of 48% and [Ge] of 16.4 at.% in the single-junction cell, efficiency of 6.18% was obtained. The long-wavelength response of μ c-Si 1− x Ge x :H cell was significantly enhanced compared with the μ c-Si:H cell. In the case of tandem cells, 0.24 μ m a-Si:H/0.9 μ m μ c-Si 1− x Ge x :H tandem cell exhibited a comparable spectral response as 0.24 μ m a-Si:H/1.4 μ m μ c-Si:H tandem cell and achieved an efficiency of 9.44%.

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Optimization of<i>μ</i>c-Si<sub>1−<i>x</i></sub>Ge<sub><i>x</i></sub>:H Single-Junction Solar Cells with Enhanced Spectral Response and Improved Film Quality

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